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| Ordering number : ENA0659 ECH8620 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 Features * General-Purpose Switching Device Applications * The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) 1unit Mounted on a ceramic board (900mm20.8mm) Conditions N-channel 100 20 2 12 1.3 1.5 150 --55 to +150 P-channel --100 20 --1.5 -12 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V 100 1 10 1.2 1.6 2.7 200 230 260 325 2.6 V A A V S m m Symbol Conditions Ratings min typ max Unit Marking : FN Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22107PE TI IM TC-00000523 No. A0659-1/6 ECH8620 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--100V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--10V ID=--0.5A, VGS=-4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=-10V, ID=--1.5A VDS=--50V, VGS=-10V, ID=--1.5A VDS=--50V, VGS=-10V, ID=--1.5A IS=--1.5A, VGS=0V --100 --1 10 --1.2 1.8 3.1 400 460 630 41 38 10.0 5.5 91 27 14.7 1.6 2.8 --0.8 --1.2 520 645 --2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A IS=2A, VGS=0V Ratings min typ 650 42 29 11.5 4.9 67 23 13.8 2.1 3 0.80 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7011A-001 Electrical Connection 8 Top View 7 6 5 0.25 2.9 0.15 8 5 0 to 0.02 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 2.8 2.3 1 0.25 2 3 4 1 0.65 4 0.3 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 No. A0659-2/6 ECH8620 Switching Time Test Circuit [N-channel] [P-channel] VIN 0V --10V VIN ID= --1A RL=50 VDD= --50V VIN 10V 0V VIN VDD=50V ID=1A RL=50 D PW=10s D.C.1% VOUT D PW=10s D.C.1% VOUT G G ECH8620 P.G 50 ECH8620 P.G 50 S S 2.0 ID -- VDS 8.0 [Nch] --1.5 ID -- VDS 0V [Pch] .0V 5.0 -V 10 .0V --6 .0V --5 . 0V 10.0 V 5.0 4 V .0V --1.2 --3 .0V V --4 Drain Current, ID -- A Drain Current, ID -- A 1.5 3.0V 15. --0.9 --2.5 V GS= V --0.6 0.5 --0.3 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 4 IT10620 ID -- VGS Drain-to-Source Voltage, VDS -- V --3.0 --1 1.0 IT10609 [Nch] ID -- VGS [Pch] VDS=10V VDS= --10V --2.5 Drain Current, ID -- A Drain Current, ID -- A 3 --2.0 2 --1.5 --1.0 25 C --25 C Ta= 75C 5C --0.5 0 0 --0.5 --1.0 --1.5 --2.0 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 --2.5 25 --25 C C --3.0 Ta= 7 --3.5 IT10610 Gate-to-Source Voltage, VGS -- V IT10621 Gate-to-Source Voltage, VGS -- V No. A0659-3/6 ECH8620 600 RDS(on) -- VGS [Nch] 1000 RDS(on) -- VGS [Pch] Ta=25C Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 500 Static Drain-to-Source On-State Resistance, RDS(on) -- m 900 800 400 1A --1A 700 600 500 400 300 200 100 0 0 300 ID=0.5A 200 ID= --0.5A 100 0 0 2 4 6 8 10 12 14 16 18 --2 Gate-to-Source Voltage, VGS -- V 600 IT10622 RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 1000 900 800 700 600 500 400 300 200 100 0 --60 --40 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V IT10611 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 500 400 300 I D= 200 A 0.5 4 S= , VG V 10V 5 -0. =ID A, V V --4 S= G A 1.0 I D= S= , VG -S= , VG A 1.0 = -ID 10V 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 10 IT10623 Ambient Temperature, Ta -- C 10 IT10612 yfs -- ID [Nch] Forward Transfer Admittance, yfs -- S yfs -- ID VDS= --10V [Pch] Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V 7 5 3 2 1.0 7 5 3 2 = Ta --2 C 5 75 C 1.0 7 5 3 2 = Ta --2 C 5 75 C 25 C 2 C 5 0.1 0.01 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 57 IT10624 --0.01 7 5 3 2 2 3 5 7 Drain Current, ID -- A 7 5 3 2 IS -- VSD --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 IT10613 [Nch] VGS=0V IS -- VSD [Pch] VGS=0V Source Current, IS -- A Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.4 0.6 0.8 1.0 1.2 IT10625 --1.0 7 5 3 2 Ta= 75 C Ta= 75 C --0.1 7 5 3 2 25 C 25 C --25 C --0.01 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 IT10614 0.001 0.2 --0.001 --0.2 Diode Forward Voltage, VSD -- V Diode Forward Voltage, VSD -- V --25 C No. A0659-4/6 ECH8620 1000 7 5 SW Time -- ID [Nch] VDD=50V VGS=10V Switching Time, SW Time -- ns 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 SW Time -- ID [Pch] VDD= --50V VGS= --10V Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 td(off) td(off) tf td(on) tf td(on) tr tr --0.01 2 2 3 57 2 1000 7 Ciss, Coss, Crss -- VDS Ciss Drain Current, ID -- A IT10626 [Nch] f=1MHz Ciss, Coss, Crss -- VDS --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 57 IT10615 [Pch] f=1MHz 1000 7 Ciss Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 5 3 2 100 7 5 3 2 5 3 2 Coss Crss 100 7 5 3 Coss Crss 0 --5 --10 --15 --20 --25 --30 IT10616 10 0 5 10 15 20 25 30 IT10627 2 Drain-to-Source Voltage, VDS -- V 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V --10 Gate-to-Source Voltage, VGS -- V [Nch] VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V VDS=50V ID=2A VDS= --50V --9 ID= --1.5A --8 --7 --6 --5 --4 --3 --2 --1 0 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IT10617 Total Gate Charge, Qg -- nC 3 2 10 7 5 IT10628 Total Gate Charge, Qg -- nC 3 2 --10 7 5 ASO IDP=12A 10 [Nch] ASO IDP= --12A [Pch] PW10s 0 s Drain Current, ID -- A PW10s 10 Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=2A 10 1m ms s 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1m ID= --1.5A 10 0 s s 10 op 0m era s tio Operation in this n( Ta area is limited by RDS(on). =2 5 C) DC DC op 10 ms era 0m tio s n( Operation in this area is limited by RDS(on). Ta = 25 C ) 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- 5 7 100 2 V IT10629 --0.01 --0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 2 IT10618 No. A0659-5/6 ECH8620 1.8 PD -- Ta Mounted on a ceramic board [Nch / Pch] (900mm20.8mm) Allowable Power Dissipation, PD -- W 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 To t al Di ss 1u ip nit ati on 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT10619 Note on usage : Since the ECH8620 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No. A0659-6/6 |
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